SHANGHAI                                     Feb 2008

MICROELE*RONICSCO., LTD.

SE8810A 

Dual N-Channel Enhancement Mode Field Effect Transistor 

Features

For a single mosfet

●V_DSS= 20 V

●R_DS(ON)< 20mW?  @ V_GS=4.5V @Ids=7A

R_DS(ON)< 25mW?  @ V_GS=2.5V @Ids=4A 

Applications

●Battery protection

●Load switch

●Power management

Construction

●Silicon epitaxial planer

Absolute Maximum Ratings

Parameter

Symbol

Rating

Units

Drain-Source Voltage

V_DS

20

V

Gate-Source Voltage

V_GS

&plu*n;12

V

Drain Current (Note 1)

Continuous

Pulsed

I_D

7

A

I_DM

28

Drain-Source Diode Forward Current

I_S

1.7

A

Maximum Power Dissipation 

P_D

1.5

W

Operating Junction Temperature Range

T_J

-55 to 150

°C

StorageTemperature Range

T_STG