图文详情
产品属性
相关推荐
品牌/商标 | SI*-IC | 型号/规格 | SE8209A |
种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 用途 | S/开关 |
封装外形 | SP/*外形 | 材料 | N-FET硅N沟道 |
开启电压 | 12(V) | 夹断电压 | 20(V) |
跨导 | 1(μS) | *间电容 | 1(pF) |
低频噪声系数 | 1(dB) | *大漏*电流 | 6000(mA) |
*大耗散功率 | 1(mW) |
SHANGHAI Feb 2008 MICROELE*RONICSCO., LTD.
SE8209A
| ||||||
FeaturesFor a single mosfet ●VDSS= 20 V ●RDS(ON)= 24mW? @ VGS=4.0V @Ids=5A RDS(ON)= 36mW? @ VGS=2.5V @Ids=3A |
| |||||
Applications
●Battery protection ●Load switch ●Power management | ||||||
Construction
●Silicon epitaxial planer | ||||||
Absolute Maximum Ratings | ||||||
Parameter | Symbol | Rating | Units | |||
Drain-Source Voltage | VDS | 20 | V | |||
Gate-Source Voltage | VGS | &plu*n;12 | V | |||
Drain Current (Note 1) | Continuous Pulsed | ID | 6 | A | ||
IDM | 24 | |||||
Drain-Source Diode Forward Current | IS | 1.7 | A | |||
Maximum Power Dissipation | PD | 1.5 | W | |||
Operating Junction Temperature Range | TJ | -55 to 150 | °C | |||
StorageTemperature Range | TSTG |
更多型号欢迎访问www.sino-ic.cn,应用方案可参考www.sino-ic.com.
或来电咨询:-8040
主要类目:1、TVS/*D保护器件2、场效应管 3、稳压管、4、肖特基二*管 5、AC-DC IC 6、霍尔IC 7、LED开路保护器件 8、二三*管