批发恩智浦NXP可控硅，BT136 600E/D

品牌:恩智浦NXP 型号:BT136-600E/D 控制方式:双向 *数:三* 封装材料:塑料封装封装外形:TO-220 关断速度:普通散热功能:带散热片功率特性:小功率频率特性:中频额定正向平均电流:4（A）控制*触发电压:1.7-3.5（V）正向重复峰值电压:600（V）

公司中文域名：杰宝莱
公司网络实名：中国可控硅批发商贴片可控硅
公司主页：https://jbl-sz.com
阿里巴巴网站：https://jepoler.cn.alibaba.com
https://jblchj.cn.alibaba.com

批发供应恩智浦NXP（原飞利浦）可控硅BT136-600E/D

QUICK REFERENCE DATA

*SYOL**	PARAMETER	MAX.	MAX.	UNIT
	BT136-	600E	800E
VDRM	Repetitive peak off-state voltages	600	800	V
IT(RMS)ITSM	RMS on-state current Non-repetitive peak on-state	4 25	4 25	A A
	current

LIMITING VALU*

Limiting values in accordance with the Absolute Maximum System (IEC 134).

*SYOL**	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
				-600	-800
VDRM	Repetitive peak off-state		-	6001	800	V
	voltages					A
IT(RMS)ITSM	RMS on-state current Non-repetitive peak	full sine wave; Tmb ≤107 °C full sine wave; Tj= 25 °C prior to	-	4
	on-state current	surge
		t = 20 ms	-	25			A
		t = 16.7 ms	-	27			A
I2t	I2t for fusing	t = 10 ms	-	3.1			A2s
dIT/dt	Repetitive rate of rise of	ITM= 6 A; IG= 0.2 A;
	on-state current after	dIG/dt = 0.2 A/µs
	triggering	T2+ G+	-	50			A/µs
		T2+ G-T2- G-	--	50 50			A/µs A/µs
		T2- G+	-	10			A/µs
IGM	Peak gate current		-	2			A
VGM	Peak gate voltage		-	5			V
PGM	Peak gate power		-	5			W
PG(*)TstgTj	Average gate power Storage temperature Operating junction	over any 20 ms period	--40 -	0.			W °C °C
	temperature

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