GT40QR21(STA1,E,D TOS 进口原装 TO-3P IGBT 晶体管

GT40QR21
Start of commercial production
2010-12
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
 IGBT : tf
 = 0.20 μs (typ.) (IC = 40 A)
 FWD : trr = 0.60 μs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A)
(6) High junction temperature : Tj
 = 175 (max)