FGL60N100BNTD 原装现货60A/1000V　*童IGBT

General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding  performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications

Features
•High Speed Switching
•Low Saturation Voltage : VCE(sat) = 2.5 V @ IC
= 60A
•High Input Impedance
•Built-in  Fast  Recovery  Diode