供应S9015

S9015M TRANSISTOR
D*CRIPTION
PNP Epitaxial Silicon Transistor
FEATUR*
High hFE and good linearity
Complementary to S9014M
APPLICATION
Low Frequency, Low Noise Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)

MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
PC Collector Dissipation 0.15 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELE*RICAL CHARA*ERISTICS(Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μA
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA
DC current gain hFE VCE=-5V, IC= -1mA
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1 V
Transition frequency fT
VCE=-5V, IC= -10mA
f=30MHz
150 MHz
Collector output capacitance Cobo VCB=-10V,IE=0,f=1MHz 7 pF
Noise figure NF
VCE=-5V,Ic=-0.2mA,
f=1KHz,RS=2KΩ
6 dB