无锡固电ISC可控硅 BTA08-600C

·With TO-220AB insulated package

·Suitables for general purpose applications where gate high sensitivity is

required. Application on 4Q such as phase control and static switching.

SYMBOL	PARAMETER	MIN	UNIT
V_DRM	Repetitive peak off-state voltage	600	V
V_RRM	Repetitive peak reverse voltage	600	V
I_T(RMS)	RMS on-state current (full sine wave)T_j=105℃	8	A
I_TSM	Non-repetitive peak on-state current t_p=20ms	80	A
T_j	Operating junction temperature	110	℃
T_stg	Storage temperature	-45~150	℃
R_th(j-c)	Thermal resistance, junction to case	2.5	℃/W
R_th(j-a)	Thermal resistance, junction to ambient	60	℃/W

SYMBOL	PARAMETER		CONDITIONS	MAX	UNIT
I_RRM	Repetitive peak reverse current		V_R=V_RRM, V_R=V_RRM, Tj=110℃	0.01 0.5	mA
I_DRM	Repetitive peak off-state current		V_D=V_DRM, V_D=V_DRM, Tj=110℃	0.01 0.5	mA
I_GT	Gate trigger current	Ⅰ	V_D=12V; R_L= 30Ω	25	mA
		Ⅱ		25
		Ⅲ		25
		Ⅳ		50
I_H	Holding current		I_GT= 0.1A, Gate Open	25	mA
V_GT	Gate trigger voltage all quadrant		V_D=12V; R_L= 30Ω	1.3	V
V_TM	On-state voltage		I_T= 11A; t_p= 380μs	1.55	V

品牌/商标

ISC/ISCSEMI

型号/规格

BTA08-600C

控制方式

单向

极数

三极

封装材料

塑料封装

封装外形

TO-220

关断速度

普通

散热功能

带散热片

频率特性

中频

功率特性

中功率

额定正向平均电流

8（A）

控制极触发电流

25（mA）

稳定工作电流

80（A）

反向重复峰值电压

600（V）

无锡固电ISC供应可控硅 BTA08-600C