无锡固电ISC 可控硅 BT134-600E

·With TO-126P package

·Designed for use in general purpose bidirectional switching and phase

control applications , which are intended to be interfaced directly to

microcontrollers , logic integrated circuits and other low power gate

trigger circuits.

SYMBOL	PARAMETER	MIN	UNIT
V_DRM	Repetitive peak off-state voltage	600	V
V_RRM	Repetitive peak off-state voltage	600	V
I_T(RMS)	RMS on-state current (full sine wave)	4	A
I_TSM	Non-repetitive peak on-state current	25	A
P_GM	Peak gate power dissipation	5	W
P_G(AV)	Average gate power dissipation	0.5	W
T_j	Operating junction temperature	110	℃
T_stg	Storage temperature	-45~150	℃

SYMBOL	PARAMETER		CONDITIONS	MIN	MAX	UNIT
I_RRM	Repetitive peak reverse current		V_R=V_RRM, V_R=V_RRM, Tj=110℃		0.01 0.2	mA
I_DRM	Repetitive peak off-state current		V_D=V_DRM, V_D=V_DRM, Tj=110℃		0.01 0.2	mA
I_GT	Gate trigger current	Ⅰ	V_D=12V; I_T= 0.1A, R_L= 30Ω		10	mA
		Ⅱ			10
		Ⅲ			10
		Ⅳ			25
V_TM	On-state voltage		I_T= 5A		1.7	V
I_H	Holding current		I_GT= 0.1A, V_D= 12V		10	mA
V_GT	Gate trigger voltage		V_D=12V; R_L= 30Ω		1.5	V

品牌/商标

ISC/ISCSEMI

型号/规格

BT134-600E

控制方式

单向

极数

三极

封装材料

塑料封装

封装外形

TO-126

关断速度

普通

散热功能

不带散热片

频率特性

中频

功率特性

小功率

额定正向平均电流

4（A）

控制极触发电流

10（mA）

稳定工作电流

25（A）

反向重复峰值电压

600（V）

无锡固电ISC 供应可控硅 BT134-600E