供应600V,8A MOSFET场效应管FQFP8N60C

地区:广东 深圳
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FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
型号/规格

FQFP8N60C

品牌/商标

FSC

封装形式

TO-220F

环保类别

无铅环保型

安装方式

直插式

包装方式

散装

功率特征