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PHKD13N03LT
Dual N-channel TrenchMOS logic level FET
1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Lithium-ion battery applications
Notebook computers
Portable equipment
PHKD13N03LT
NXP
SOP-8
无铅环保型
贴片式
盒带编带包装
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