供应60V,12A N-Ch MOS场效应管 AOD444

AOD444/AOI444
60V N-Channel MOSFET

General Description Product Summary
VDS
ID (at VGS=10V) 12A
RDS(ON) (at VGS=10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 85mΩ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Maximum Junction-to-Case Steady-State RθJC °C/W
Maximum Junction-to-Ambient A D °C/W
4
60
7.5
Power Dissipation B PD W
Power Dissipation A PDSM W
TA=70°C
20
1.3
TA=25°C
A
TA=25°C
IDSM A
TA=70°C
ID
12
9
TC=25°C
TC=100°C
Avalanche energy L=0.1mH C mJ
Avalanche Current C
3
Continuous Drain
Current
18
4
19 A
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). Those devices are suitable for use
in PWM, load switching and general purpose applications.