供应5.5A, 400V, 1.000 Ohm, N-Ch Power MOSFET BUZ60

BUZ60
5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17414

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