供应异步静态随机存取存储器IS63LV1024-8K

地区:广东 深圳
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深圳市广辉电子有限公司

银牌会员17年

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128K x 8  HIGH-SPEED CMOS STATIC RAM
JULY 2008
3.3V REVOLUTIONARY PINOUT
FEATURES DESCRIPTION
* High-speed access times: The ISSI IS63LV1024/IS63LV1024L is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
  8, 10, 12  ns
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
* High-performance, low-power CMOS process
ricated using ISSI's high-performance CMOS technology.
* Multiple center power and ground pins for This highly reliable process coupled with innovative circuit
greater noise immunity design techniques, yields higher performance and low
power consumption devices.
* Easy memory expansion with CE and  OE
options When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
* CE power-down
reduced down to 250 μW (typical) with CMOS input levels.
* Fully static operation: no clock or refresh
required The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
* TTL compatible inputs and outputs
* Single 3.3V power supply
* Packages available:
–  32-pin 300-mil SOJ
–  32-pin 400-mil SOJ
–  32-pin TSOP (Type II)
–  32-pin STSOP (Type I)
–  36-pin BGA (8mmx10mm)
* Lead-free Available
型号/规格

IS63LV1024-8K

品牌/商标

ISSI