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Silicon Epitaxial Planar Transistor 2SA812
Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 1
FEATUR*
z Commplementary to 2SC1623.
Pb
Lead-free
z High DC current gain:h
FE
=200t*.
(V
CE
=-6.0V,I
C
=-1.0mA)
z High Voltage: V
CEO
=-50VSilicon Epitaxial Planar Transistor 2SA812
Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 1
FEATUR*
z Commplementary to 2SC1623.
Pb
Lead-free
z High DC current gain:h
FE
=200t*.
(V
CE
=-6.0V,I
C
=-1.0mA)
z High Voltage: V
CEO
=-50V
Silicon Epitaxial Planar Transistor 2SA812
Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 1
FEATUR*
z Commplementary to 2SC1623.
Pb
Lead-free
z High DC current gain:h
FE
=200t*.
(V
CE
=-6.0V,I
C
=-1.0mA)
z High Voltage: V
CEO
=-50V
PANJIT/强茂
全系列
快恢复二*管
点接触型
硅
直插型
玻璃封装
大功率
高频
FDG(A)
FGH(V)