供应2SA812

Silicon Epitaxial Planar Transistor 2SA812


Document number: BL/SSSTC010 www.galaxycn.com
Rev.A 1
FEATUR*
z Commplementary to 2SC1623.
Pb
Lead-free
z High DC current gain:h
FE
=200t*.
(V
CE
=-6.0V,I
C
=-1.0mA)
z High Voltage: V
CEO
=-50V

APPLICATIONS
z Audio frequency, general purpose amplifier SOT-23

ORDERING INFORMATION

T*e No. Marking Package Code

2SA812 M4/M5/M6/M7 SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-60 V
V
CEO
Collector-Emitter Voltage
-50 V
V
EBO
Emitter-Base Voltage
-5 V
I
C
Collector Current -Continuous
-100 mA
P
C
Collector Dissipation
200 mW
T
j,
T
stg
Junction and Storage Temperature
-55~150 ℃
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