专营宏空 CRAM梦幻磁介质存储器 CRAM1275原装现货

CRAM1275
(1M x 8 CRAM Memory)

·Fast 35ns Read/Write Cycle
·SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
·Unlimited Read & Write Endurance
·Data Always Non-volatile for >20 years at Temperature
·One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
·Replace battery-backed SRAM solutions with CRAM to eliminate battery *embly, improving reliability
·3.3 Volt Power Supply or 5 Volt Power Supply For DIP
·Automatic Data Protection on Power Loss
·Commercial, Industrial, Automotive Temperatures
·RoHS-Compliant SRAM TSOP2 Package
·RoHS-Compliant SRAM BGA Package
·RoHS-Compliant SRAM DIP Package
·AEC-Q100 Grade 1 Qualified

INTRODU*ION
The CRAMk Nonvolatile CRAM is 8,388,608-bit, fully static, nonvolatile CRAM organized as 1048,576 words by 8 bits.The CRAM1275 offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

The CRAM1275 is the ideal memory solution for applications that must permanently store and retrieve criti-cal data and programs quickly.

The CRAM1275 is available in a *all footprint 400-mil, 44-lead plastic *all-outline TSOP t*e 2 package or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers and 49.3 mm x 18.8 mm 36 DIP. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.

The CRAM1275 provides highly reliable data storage over a wide range of temperatures. The product is of-fered with commercial temperature range (0 to 70 °C), industrial temperature range (-40 to 85 °C), and AEC-Q100 Grade 1 temperature range (-40 to 125 °C) options.