FDMS86101 ON 安森美 进口原装 PQFN-8 晶体管 MOSFET

100 V, 60 A, 8 m General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A • Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A • Advanced Package and Silicon combination for low rDS(on) and high efficiency • MSL1 robust package design • 100% UIL tested • 100% Rg tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion