FGH75T65SQDT-F155 ON 安森美 进口原装 IGBT管 GBT MOSFET 单

FGH75T65SQDT

650 V, 75 A Field Stop Trench IGBT

Features

• Maximum Junction Temperature: TJ = 175

o

C

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ I

C = 75 A

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

General Description

Using novel field stop IGBT technology, ON semiconductor’s

new series of field stop 4th generation IGBTs offer he optimum

performance for solar inverter, UPS, welder, telecom, ESS and

PFC applications where low conduction and switching losses

are essential.