供应存储器SST39VF1601

FEATUR*:
• Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (T*ical)
– Greater than 100 years Data Retention
• Low Power Consumption (t*ical values at 5 M
– Active Current: 9 mA (t*ical)
– Standby Current: 3 µA (t*ical)
– Auto Low Power Mode: 3 µA (t*ical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (* 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#) Security-ID Feature
– SST: 128 bits; User: 128 bits
 Fast Read Access Time:
– 70 ns
– 90 ns
 Latched Address and Data
 Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (t*ical)
– Block-Erase Time: 18 ms (t*ical)
– Chip-Erase Time: 40 ms (t*ical)
– Word-Program Time: 7 µs (t*ical)
 Automatic Write Timing
– Internal VPP Generation
 End-of-Write Detection
– Toggle Bits
– Data# Polling
 CMOS I/O Compatibility
 JEDEC Standard
– Flash EEPROM Pinouts and command sets
 Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M