供应MOS管FDM2509NZ
地区:广东 深圳
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应用于锂电池
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
FAIRCHILD/*童
FDM2509NZ
*缘栅(MOSFET)
N沟道
增强型
TR/激励、驱动
CHIP/小型片状
N-FET硅N沟道
20(V)
12(V)
240(μS)
12000(pF)
100(dB)
18(mA)
22(mW)