IPP200N15N3G MOSFET N-Ch原裝 Infineon

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

特性

•n通道，正常电平

•优秀的门电荷x rds (on)产品(FOM)

·低通电阻rds (on)

•175°C的操作温度

•无pb铅电镀;通过无铅认证

•符合JEDEC1)目标应用要求

•适用于高频开关和同步整流

•根据IEC61249-2-21无卤

特性

•n通道，正常电平

•优秀的门电荷x rds (on)产品(FOM)

·低通电阻rds (on)

•175°C的操作温度

•无pb铅电镀;通过无铅认证

•符合JEDEC1)目标应用要求

•适用于高频开关和同步整流

•根据IEC61249-2-21无卤

IPP200N15N3GIPP200N15N3GIPP200N15N3GIPP200N15N3G