IPD60R650CE场效应晶体管原裝進口Infineon

MOSFET

600VCoolMOSaCEPowerTransistor

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.CoolMOS™CEisa

price-performanceoptimizedplatformenablingtotargetcostsensitive

applicationsinConsumerandLightingmarketsbystillmeetinghighest

efficiencystandards.Thenewseriesprovidesallbenefitsofafast

switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand

offeringthebestcostdownperformanceratioavailableonthemarket.

Features

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss

•Veryhighcommutationruggedness

•Easytouse/drive

•Pb-freeplating,Halogenfreemoldcompound

•Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages

fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.

Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson

thegateorseparatetotempolesisgenerallyrecommended.

Note2:*6R650CEisFullPAKmarkingonly

Table1KeyPerformanceParameters

Parameter Value Unit

VDS @ Tj,max 650 V

RDS(on),max 650 mΩ

Id. 9.9 A

Qg.typ 20.5 nC

ID,pulse 19 A

Eoss@400V 1.9 μJ

Type/OrderingCode P

IPD60R650CEIPD60R650CEIPD60R650CEIPD60R650CE

场效应晶体管

600年vcoolmosaCEPowerTransistor

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

场效应管,designedaccordingtothesuperjunction(SJ)原理及

pioneeredbyInfineonTechnologies.CoolMOS™CEisa

price-performanceoptimizedplatformenablingtotargetcostsensitive

applicationsinConsumerandLightingmarketsbystillmeetinghighest

efficiencystandards.Thenewseriesprovidesallbenefitsofafast

switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand

offeringthebestcostdownperformanceratioavailableonthemarket。

特性

•ExtremelylowlossesduetoverylowFOMRdson * QgandEoss

•Veryhighcommutationruggedness

•Easytouse /驱动

•Pb-freeplating,Halogenfreemoldcompound

•Qualifiedforstandardgradeapplications

应用程序

PFCstages,hardswitchingPWMstagesandresonantswitchingstages

fore.g.PCSilverbox,适配器,LCD&PDPTVandindoorlighting。

Pleasenote:注一:ForMOSFETparallelingtheuseofferritebeadson

thegateorseparatetotempolesisgenerallyrecommended。

注2:* 6 r650ceisfullpakmarkingonly

Table1KeyPerformanceParameters

参数值单位

VDS @ Tj，最大650 V

650 mΩRDS(上),马克斯

9.9 Id。

路上。typ 20.5数控

ID,脉冲19

1.9 Eoss@400VμJ

类型/ OrderingCode P