CSD23202W10 Texas Instruments MOSFET 12V P-channel NexFET Pwr MOSFET

1 Features

Product Summary

1• Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT

• Small Footprint 1 mm × 1 mm VDS Drain-to-Source Voltage –12 V

• Low Profile 0.62-mm Height Qg Gate Charge Total (–4.5 V) 2.9 nC

• Pb Free Qgd Gate Charge Gate-to-Drain 0.28 nC

• Gate ESD Protection – 3 kV VGS = –1.5 V 82 mΩ

Drain-to-Source On- VGS = –1.8 V 67 mΩ

• RoHS Compliant RDS(on) Resistance VGS = –2.5 V 54 mΩ

• Halogen Free

VGS = –4.5 V 44 mΩ

VGS(th) Threshold Voltage –0.60 V

2 Applications

• Battery Management Ordering Information(1)

• Load Switch Device Qty Media Package Ship

• Battery Protection CSD23202W10 3000 7-Inch Reel 1 × 1-mm Wafer Tape and

CSD23202W10T Level Package Reel 250 7-Inch Reel

3 Description (1) For all available packages, see the orderable addendum at

This 12 V, 44 mΩ device is designed to deliver the the end of the data sheet.

lowest on-resistance and gate charge in a small

1 mm × 1 mm outline with excellent thermal