M1N60/M2N60/M8N60/M10N60

地区:广东 深圳
认证:

深圳市梵锴希科技有限公司

普通会员

全部产品 进入商铺
型号
TYPE
漏源电压栅源电压漏极电流最大耗损功率静态漏源电阻封装形式
PACKAGE
VDSSVGSIDPDRdson(max)
Vgs=10V
VVAWΩ
M1N60C600300.81.2515TO-92
1N606003012814TO-251/TO-252
M5N50500305481.6TO-251/TO-252
M72012003010550.4TO-252
M2N60600302704.5TO-220EW
M4N60600304752.3TO-220EW
M7N606003071471.2TO-220EW
M8N606003081101.25TO-220EW
M730400305.587.51.05TO-220EW
M74040030101340.54TO-220EW
M830500304.587.51.55TO-220EW
M8405003081340.9TO-220EW
M4N60F600304362.3TO-220F
M5N50F500305281.6TO-220F
M7N60F600307481.2TO-220F
M8N50F500308440.9TO-220F
M8N60F600308481.25TO-220F
M10N60F6503010501TO-220F
M12N65F6503012480.8TO-220F
M15N50F5003015560.45TO-220F
M20N50F500302038.50.3TO-220F
M20N60F6003020390.45TO-220F
品牌/商标

IR/国际整流器

型号/规格

M1N60/M2N60/M8N60/M10N60

种类

绝缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

封装外形

P-DIT/塑料双列直插