Si2301A SOT23 N沟道 -20V -2.8A
地区：广东 深圳
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Part No. | Package | Configuration | BVds (V) | Vgs (V) | ID(A) 25℃ | Vth(V) Max | Rds(on) Max(mΩ) /25°C @Vgs= | ESD Protect | ||||||
10V | 5.0V | 4.5V | 4.0V | 2.5V | 1.8V | 1.25V | ||||||||
Si2300 | SOT-23 | Single N | 20 | ±8 | 5.4 | 1.2 |
|
| 40 |
| 55 |
|
|
|
Si2302 | SOT-23 | Single N | 20 | ±8 | 3.0 | 1.0 |
|
| 65 |
| 90 |
|
|
|
Si2306 | SOT-23 | Single N | 30 | ±20 | 3.5 | -2.5 | 65 |
| 105 |
|
|
|
|
|
Si3400 | SOT-23 | Single N | 30 | ±12 | 5.5 | 1.45 | 32 |
| 35 |
| 52 |
|
|
|
Si2301A | SOT-23 | Single P | -20 | ±8 | -2.8 | -0.9 |
|
| 110 |
| 150 |
|
|
|
Si2301 | SOT-23 | Single P | -20 | ±8 | -2.5 | -0.9 |
|
| 130 |
| 180 |
|
|
|
Si2305 | SOT-23 | Single P | -20 | ±8 | -4.2 | -1.3 | 55 |
| 70 |
| 120 |
|
|
|
Si3401 | SOT-23 | Single P | -30 | ±12 | 4.2 | -1.3 | 60 |
| 75 |
| 120 |
|
|
|
Si3407 | SOT-23 | Single P | -30 | ±20 | -4.2 | -2.5 | 60 |
| 90 |
|
|
|
|
|
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SI
Si2301A
绝缘栅(MOSFET)
N沟道
增强型
CC/恒流
CHIP/小型片状
GE-N-FET锗N沟道
