STB32NM50N ST意法 原装MOS管 现货供应

 型号：STB32NM50N

 制造商: STMicroelectronics

 产品种类: MOSFET

 技术: Si

 安装风格: SMD/SMT

 封装 / 箱体: TO-263-3

 通道数量: 1 Channel

 晶体管极性: N-Channel

 Vds-漏源极击穿电压: 500 V

 Id-连续漏极电流: 22 A

 Rds On-漏源导通电阻: 130 mOhms

 Vgs th-栅源极阈值电压: 4 V

 Vgs - 栅极-源极电压: 25 V

 Qg-栅极电荷: 62.5 nC

 Pd-功率耗散: 190 W

 配置: Single

 商标名: MDmesh

 封装: Cut Tape

 封装: MouseReel

 封装: Reel

 系列: STB32NM50N

 晶体管类型: 1 N-Channel

 商标: STMicroelectronics

 CNHTS: 8541290000

 下降时间: 23.6 ns

 HTS代码: 8541290095

 MXHTS: 85412999

 产品类型: MOSFET

 上升时间: 9.5 ns

 工厂包装数量: 1000

 子类别: MOSFETs

 TARIC: 8541290000

 典型关闭延迟时间: 110 ns

 典型接通延迟时间: 21.5 ns

 单位重量: 4 g

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. 

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. 

It is therefore suitable for the most demanding high efficiency converters.