200VP-频场效应管 SI4477DY-T1-GE3 VISHAY品牌 全新原装
地区：广东 深圳
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SI4477DY-T1-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Adapter Switch
- Notebook
- Game Station
PRODUCT SUMMARY
0.0062 at VGS = - 4.5 V
0.0105 at VGS = - 2.5 V
- 26.6
- 20.6
VDS (V)
RDS(on) (Ω)
ID (A)d
Qg (Typ.)
- 20
59 nC
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Continuous Drain Current (TJ = 150 °C) TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 26.6
- 21.3
- 18
- 14.5
Continuous Source-Drain Diode Current TC = 25 °C
TA = 25 °C
- 5.5
- 2.5
Maximum Power Dissipation TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
6.6
4.2
3
1.95
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
± 12
V
ID
A
Pulsed Drain Current
IDM
- 60
A
IS
A
Avalanche Current L = 0.1 mH
IAS
30
A
Single-Pulse Avalanche Energy L = 0.1 mH
EAS
45
mJ
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta t ≤ 10 s
RthJA
34
41
°C/W
Maximum Junction-to-Foot Steady State
RthJF
15
19
°C/W
SI4477DY-T1-GE3
VISHAY
SOP-8
无铅环保型
贴片式
卷带编带包装
