供应 8毫欧 *内阻 电动车控制器用MOSFET 110A 60V

供应 8毫欧 *内阻 电动车控制器用MOSFET 110A 60V

 
Features
■ RDS(on) (Max 0.008  ?) @ VGS=10V
■ Performance and Cost Competitive
■ Advanced Trench Technology  
■  Low RDS(on) Minimizes Conduction Loss
■  Low Capacitance Minimizes Driver Loss
■ Optimized Gate Charge Minimizes Switching Loss
General Description
This low voltage Power MOSFET is produced using
advanced high density trench DMOS technology. This lates
technology has been especially designed to minimize
on-state resistance and parasitic capacitance, have a high
rugged avalanche characteristics. These devices are well
suited for high efficiency switching applications、DC/DC
conversion、CPU power delivery and Synchronous
rectification

Symbol Parameter Value Units
VDSS  Drain to Source Voltage  60 V
Continuous Drain Current ( @Tc=25
oC )   (Note 3)                            110 A
ID
Continuous Drain Current ( @Tc=100
oC )  (Note 3)                            70 A
IDM  Drain Current Pulsed  (Note 1)                                 380 A
VGS  Gate to Source Voltage  &plu*n;20 V
EAS  Single Pulsed Avalanche Energy  (Note 2)  480 mJ
EAR  Repetitive Avalanche Energy  (Note 1)  15 mJ
Total Power Dissipation ( @Tc=25
oC )  150 W
PD
Linear Derating Factor    1.0 W/
oC
TSTG, TJ  Operating Junction Temperature & Storage Temperature  -55 to 175
oC
TL
Maximum Lead Tempereture for soldering purpose,
1/8 from Case for 5 seconds
300
oC

Electrical Characteristics   (Tc=25oC unless otherwise noted)  
 
Symbol Parameter Test Conditions Min T* Max  Units
Off Characteristics
BVDSS  Drain-Source Breakdown Voltage  VGS=0V, ID=250uA 60 - - V
?BVDSS/
?TJ
Breakdown Voltage Temperature
Coefficience
 
ID=250uA, referenced to 25oC  - 0.03 - V/
oC
VDS=48V, VGS=0V - - 1 uA
IDSS  Drain-Source Leakage Current
VDS=48V, VGS=0V, TC=125
oC - - 100 uA
Gate-Source Leakage, Forward  VGS=20V, VDS=0V - - 100 nA
IGSS
Gate-Source Leakage, Reverse   VGS=-20V, VDS=0V - - -100 nA
On Characteristics
VGS(th)  Gate Threshold Voltage  VDS=VGS, ID=250uA 2.0 - 4.0 V
RDS(on)
Static Drain-Source On-state
Resistance
 
VGS=10V, ID=24A - 6.0 8.0  m?