供应NCE代理MOS管NCE01P18

Description
The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.

General Features
●  VDS =-100V,ID =-18A
    RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
●  Super high dense cell design
●  Advanced trench process technology
●  Reliable and rugged
●  High density cell design for ultra low On-Resistance