Description The NCE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V DS =30V,I D =50A R DS(ON) < 11mΩ @ V GS =10V R DS(ON) < 16mΩ @ V GS =5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply
