供应MJ11032G NPN MJ11033G PNP 晶体管

类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：-MJ11032G NPN  MJ11033G PNP 晶体管 MJ11032G NPN  MJ11033G PNP 晶体管
晶体管类型：PNP - 达林顿
电流 - 集电极 (Ic)（最大）：50A
电压 - 集电极发射极击穿（最大）：120V
Ib、Ic条件下的Vce饱和度（最大）：3.5V @ 500mA，50A
电流 - 集电极截止（最大）：2mA
在某 Ic、Vce 时的最小直流电流增益 (hFE)：1000 @ 25A，5V
功率 - 最大：300W
频率 - 转换：-
安装类型：通孔
封装/外壳：TO-204AE
供应商设备封装：TO-3
包装：托盘
其它名称：MJ11033GOS
标准包装：100
备注：MJ11033G高电流互补硅功率晶体管的使用如在补充通用放大器的输出设备应用程序。
特点：
•高直流电流增益  −hFE= 1000 （最小值） @我C= 25 ADC
                         hFE= 400 （最小值）     @我C= 50 ADC
•曲线100 A（脉冲）
•保护二极管额定我
•单片式结构，具有内置基射极分流电阻
•结温为+ 200_C

•无铅包可用

MJ11032G NPN  MJ11033G PNP 晶体管

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High-Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200C

• Pb−Free Packages are Available*

There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200C; TC is

variable depending on conditions. At high case

MJ11032G NPN  MJ11033G PNP 晶体管