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for use as output devices in complementary general purpose
amplifier applications.
• High DC Current Gain −
hFE = 1000 (Min) @ IC − 20 Adc
• Monolithic Construction with Built−in Base Emitter Shunt
Resistor
• Junction Temperature to +200C
MJ11016 MJ11016
MJ11016
ON(安森美)
TO-220
无铅环保型
直插式
散装
大功率
高频
NPN型
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