晶体MJ21193G MJ21193G 16A250V 250W PNP

型号：MJ21193G MJ21193G MJ21193G

类别：分离式半导体产品

家庭：晶体管(BJT) - 单路
系列：-
晶体管类型：PNP
电流 - 集电极 (Ic)（最大）：16A
电压 - 集电极发射极击穿（最大）：250V
Ib、Ic条件下的Vce饱和度（最大）：4V @ 3.2A，16A
电流 - 集电极截止（最大）：100μA
在某 Ic、Vce 时的最小直流电流增益 (hFE)：25 @ 8A，5V
功率 - 最大：250W
频率 - 转换：4MHz
安装类型：通孔
封装/外壳：TO-204AA，TO-3
供应商设备封装：TO-3
包装：托盘
其它名称：MJ21193GOS
标准包装：100
备注：MJ21193 （ PNP ）和MJ21194 （ NPN ）利用穿孔Emitter技术和专门用于高功率音频输出而设计，磁头定位器和线性应用。
特点
•总谐波失真特点
•高直流电流增益−hFE= 25分钟@我C= 8 ADC
•出色的增益线性度
•高SOA ： 2.5 A ， 80 V， 1秒

•无铅包可用

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

                                                             MJ21193 − PNP MJ21194 − NPN

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable

depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to value