IR 晶体管 MOSFET IRFP450PBF

IRFP450PBF

IRFP450PBF

IRFP450PBF

IRFP450PBF

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

IRFP450PBF

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications

技术: Si

安装风格: Through Hole

封装 / 箱体: TO-247-3

通道数量: 1 Channel

晶体管极性: N-Channel

Vds-漏源极击穿电压: 500 V

Id-连续漏极电流: 14 A

Rds On-漏源导通电阻: 400 mOhms

Vgs - 栅极-源极电压: 10 V

Vgs th-栅源极阈值电压: 2 V

Qg-栅极电荷: 150 nC

最小工作温度: - 55 C

最大工作温度: + 150 C

Pd-功率耗散: 190 W

配置: Single

通道模式: Enhancement

封装: Tube

系列: IRFP  

晶体管类型: 1 N-Channel  

商标: Vishay / Siliconix  

正向跨导 - 最小值: 9.3 S  

下降时间: 44 ns  

产品类型: MOSFET  

上升时间: 47 ns  

工厂包装数量: 500  

子类别: MOSFETs  

典型关闭延迟时间: 92 ns  

典型接通延迟时间: 17 ns  

单位重量: 38 g