TOSHIBA 晶体管输出 TLP781(BL F)

TLP781(BL F)

TLP781(BL F)

TLP781(BL F)

TLP781(BL F)

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage

Circuits

The TOSHIBA TLP781 consists of a silicone photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

four lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kVRMS (min)).

• TLP781 : 7.62mm pitch type DIP4

• TLP781F : 10.16mm pitch type DIP4

• Collector-emitter voltage: 80V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• Isolation voltage: 5000Vrms (min.)

• UL recognized: UL1577, file No. E67349

• BSI approved: BS EN60065:2002

Approved no.8961

BS EN60950-1:2006

Approved no.8962

• SEMKO approval: EN60950-1,EN60065 under plan

• Option(D4)type

VDE approved : DIN EN60747-5-2

Certificate No. 40021173

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

• Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance 6.5mm(min) 8.0mm(min)

Clearance 6.5mm(min) 8.0mm(min)

Insulation thickness 0.4mm(min) 0.4mm(min)