CT Micro线性光耦CT816D3 S T3

CT Micro线性光耦CT816D3 S T3

CT Micro线性光耦CT816D3 S T3

线性光耦是一种用于模拟信号隔离的光耦器件，和普通光耦一样，线性光耦真正隔离的是电流。线性光耦能够保护被测试对象和测试电路，并减小环境干扰对测试电路的影响。

CT Micro线性光耦CT816D3 S T3

CT Micro线性光耦CT816D3 S T3

Features

•High isolation 5000 VRMS

•CTR flexibility available see order information

•DC input with transistor output

•Operating Temperature range - 55 °C to 110 °C

•Regulatory Approvals

UL - UL1577 (E364000)

VDE - EN60747-5-5(VDE0884-5)

CQC – GB4943.1, GB8898

IEC60065, IEC60950

Applications

•Switch mode power supplies

•Computer peripheral interface

•Microprocessor system interface

Description

The CT816 series consists of a photo transistor

optically coupled to a gallium arsenide Infrared

emitting diode in a 4-lead DIP package with bending

options.

CT Micro线性光耦CT816D3 S T3

Profile Feature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (ts) from (Tsmin to Tsmax) 60-120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / -5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max

Time 25°C to Peak Temperature 8 minutes max.