供应现货 FKBB6016 东沅单N沟道MOSFET

Fet/东沅 FKBB6016 PRPAK3x3 N沟道60V快速开关MOSFET

Description

The FKBB6016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buckconverter applications.The FKBB6016 meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.

Features

● 100% EAS Guaranteed

● Green Device Available

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 60V
● Static Drain-Source On-Resistance
VGS=10V , ID=8A: 12mΩ
VGS=4.5V , ID=6A: 15mΩ
● Gate Threshold Voltage: 1.2~2.5V
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 75S
● Gate Resistance: 1.5Ω
● Total Gate Charge: 28.7nC
● Gate Source Charge: 10.5nC
● Gate-Drain Charge: 9.9nC
● Turn-On Delay Time: 10.4ns
● Rise Time: 9.2s
● Turn-Off Delay Time: 63ns
● Fall Time: 4.8ns
● Input Capacitance: 3240pF
● Output Capacitance: 210pF
● Reverse Transfer Capacitance: 146pF

产品规格书（部分）