供应东沅场效应管 FKBB0208 N沟道MOSFET

Fet/东沅 FKBB0208 PRPAK3x3 N沟道100V快速开关MOSFET

Description

The FKBB0208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buckconverter applications.The FKBB0208 meet the RoHS and GreenProduct requirement with full function reliabilityapproved.

Features

● Green Device Available

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

Absolute Maximum Ratings
● Drain- Source Vltage: 100V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 4.6A
ID@TC=100℃: 3.7A
● Pulsed Drain Current: 11A
● Total Power Dissipation: 15.6W  
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

产品规格书（部分）