供应FKBA4909 东沅40V双路N和P场效应管

Fet/东沅 FKBA4909 PRPAK5x6 N和P沟道快速开关MOSFET

Description

The FKBA4909 is the high performancecomplementary N-ch and P-ch MOSFETs withhigh cell density, which provide excellentRDSON and gate charge for most of thesynchronous buck converter applications.The FKBA4909 meet the RoHS and GreenProduct requirement 100% EAS guaranteedwith full function reliability approved.

Features

● 100% EAS Guaranteed

● Green Device Available

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

N沟道 Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 40V
● Static Drain-Source On-Resistance
VGS=10V , ID=12A: 8mΩ
VGS=4.5V , ID=10A: 10mΩ
● Gate Threshold Voltage: 1.0~2.5V
● Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃: 1uA
VDS=32V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 39S
● Gate Resistance: 1.6Ω
● Total Gate Charge: 18.8nC
● Gate Source Charge: 4.7nC
● Gate-Drain Charge: 8.2nC
● Turn-On Delay Time: 14.3ns
● Rise Time: 2.6ns
● Turn-Off Delay Time: 77ns
● Fall Time: 4.8ns
● Input Capacitance: 2332pF
● Output Capacitance: 193pF
● Reverse Transfer Capacitance: 138pF

产品规格书（部分）

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