供应蓝箭N沟道MOS管 BRD100N03 TO-252封装

BlueRocket/蓝箭电子 BRD100N03 TO-252 塑封封装N沟道MOS场效应管

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: 30~32V
● Zero Gate Voltage Drain Current: 1μA
● Gate-Body Leakage CurrentForward: ±0.1μA
● Gate Threshold Voltage: 1.0V 1.7V 3.0V
● Forward On Voltage: 1.2V
● Static Drain–Source On–Resistance
VGS=10V ID=70A: 2.8~3.5mΩ
VGS=4.5V ID=35A: 4.0~7.0mΩ
● Gate resistance: 1.8Ω
● Input Capacitance: 2500pF
● Output Capacitance: 310pF
● Reverse Transfer Capacitance: 275pF
● Total Gate Charge Qg(10V): 80nC
● Total Gate Charge Qg(4.5V): 35nC
● Gate-to-Source Charge: 13nC
● Gate-to-Drain Charge: 13nC
● Turn–On Delay Time: 25.7~50ns
● Turn–On Rise Time: 10~20ns
● Turn–Off Delay Time: 128~200ns
● Turn–Off Fall Time: 34~70ns

BRD100N03 Applications

These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

BRD100N03产品规格书（部分）