供应东沅 FKBA3115E P沟道场效应管MOSFET

Fet/东沅 FKBA3115E PRPAK5x6 N沟道30V快速开关MOSFET

FKBA3115E Absolute Maximum Ratings
● Drain- Source Vltage: -30V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: -59A
ID@Tc=100℃: -37A
● Pulsed Drain Current: -180A
● Single Pulse Avalanche Energy: 125mJ
● Avalanche Current: -50A
● Total Power Dissipation: 104W 
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: -30V
● Static Drain-Source On-Resistance
VGS=-10V , ID=-20A: 6.8~8.5mΩ
VGS=-4.5V , ID=-15A: 10.5~14mΩ
● Gate Threshold Voltage: -1.0~2.5V
● Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃: 1uA
VDS=-24V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 25S
● Total Gate Charge: 68nC
● Gate Source Charge: 10nC
● Gate-Drain Charge: 12nC
● Turn-On Delay Time: 12ns
● Rise Time: 11ns
● Turn-Off Delay Time: 105ns
● Fall Time: 21ns
● Input Capacitance: 4319pF
● Output Capacitance: 439pF
● Reverse Transfer Capacitance: 299pF

FKBA3115E产品规格书（部分）