供应东沅 FKBA0903 N和P沟道双路MOSFET

Fet/东沅 FKBA0903 PRPAK5x6 N和P沟道快速开关MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: ±100V
● Static Drain-Source On-Resistance
VGS=10V , ID=2.5A: 80~100mΩ
VGS=4.5V , ID=2.0A: 90~125mΩ
● Gate Threshold Voltage: 1.2~2.7V
● Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃: 1uA
VDS=80V , VGS=0V , TJ=85℃: 30uA
● Gate- Source Leakage Current: ±100nA
● Gate Resistance: 3.5Ω
● Total Gate Charge: 15nC
● Gate Source Charge: 3.2nC
● Gate-Drain Charge: 2.6nC
● Turn-On Delay Time: 8ns
● Rise Time: 12ns
● Turn-Off Delay Time: 20ns
● Fall Time: 6ns
● Input Capacitance: 987pF
● Output Capacitance: 38pF
● Reverse Transfer Capacitance: 26pF

FKBA0903 Diode Characteristics
● Continuous Source Current: 12A
● Diode Forward Voltage: 1.2V

FKBA0903产品规格书（部分）