供应FKD3006S 东沅N沟道MOSFET

Fet/东沅 FKD3006S TO252 30V N沟道快速开关MOSFET

FKD3006S Absolute Maximum Ratings
● Drain- Source Voltage: 30V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TA=25℃：78A
ID@TA=70℃：49A
ID@TA=25℃：15.7A
ID@TA=70℃：12.6A
● Pulsed Drain Current: 156A
● Single Pulse Avalanche Energy: 48mJ
● Avalanche Current: 31A
● Total Power Dissipation
PD@TC=25℃：50W
PD@TA=25℃ ：2W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain-Source Breakdown Voltage: 30V 
● Static Drain-Source On-Resistance
VGS=10V , ID=30A: 4.6~5.5mΩ
VGS=4.5V , ID=15A: 7.0~8.5mΩ
● Gate Threshold Voltage: 1.2~2.5V
● Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃: 1uA
VDS=24V , VGS=0V , TJ=125℃: 5uA
● Gate-Source Leakage Current: ±100nA
● Gate Resistance: 2.5mΩ
● Total Gate Charge(10V) : 16.5nC
● Total Gate Charge(4.5V) : 8.5nC
● Gate-Source Charge: 2.9nC
● Gate-Drain Charge: 3.5nC
● Turn-On Delay Time: 7ns
● Rise Time: 42ns
● Turn-Off Delay Time: 16ns
● Fall Time: 6.2ns
● Input Capacitance: 882pF
● Output Capacitance: 380pF
● Reverse Transfer Capacitance: 65pF

FKD3006S产品规格书（部分）