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FQP13N50C/FQPF13N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( t*ical 43 nC)
• Low Crss ( t*ical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FAIRCHILD/*童
FQPF13N50C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
500(V)
20(pF)
2(dB)
13000(mA)
480000(mW)