高频三*管 2SC3355 2SC3355-A-K 小功率三*管TO-92封装

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SILICON TRANSISTOR
2SC3355

 

HIGH FREQUENCY LOW *ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR

 

D*CRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.

 

• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

 

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage             VCBO                  20 V
Collector to Emitter Voltage          VCEO                 12 V
Emitter to Base Voltage                VEBO                 3.0 V
Collector Current                           IC                     100 mA
Total Power Dissipation                PT                      600 mW
Junction Temperature                   Tj                       150 C
Storage Temperature                    Tstg                 65 to 150 C

 

供应肖特基二*管:
1N5822   3A 40V  DO-27/DO-201AD
整流直插:
1N4001-1N4007 1N5391-1N5399  RL205-RL207  1N5401-1N5408  6A01-6A10 10A01-10A10
快速管直插:
FR103-FR107  FR153-FR157  FR204-FR207  FR302-FR307  HER102-HER108 HER203-HER208 HER302-HER308 UF4004-UF4007  UF5402-UF5048
肖特基二*管:
1N5817-1N5819 SR120-SR1100 SR240-SR2100  SR320-SR3100  1N5820-1N5822  SR520-SR5100
整流贴片:
M1  M4  M7 S2M S2B S2M S3G S3M S3J S3A S2A
肖特基贴片:
SS12-SS14 SS24-SS210  SS34-SS310  *RX120-*RX140(1N5819 SOD-123)
快速管贴片:
RS1G-RS1M US1G-US1M   *1G-*1M  US2J  *2J
稳压管直插 贴片:
0.5W2V-120V 1W3.3V-1W100V 2W3.3V-120V 5W3.3V-200V 2EZ6.8D5  2EZ12D5  2EZ24D5
三*管:
TL431 78L05-78L18 79L05-79L-13009 MCR100-6 MCR100-8 MAC97A6 MCA97A8 S8050 S9011-S9018
整流桥:
DB101-DB107 W04-W01 2W01-2W10 *05S-*10S DB101S-DB107S KBP201-KBP210 KBL401-KBL410 KBU601-KBU610 KBU801-KBU810
GBU601-GBU610 GBU801-GBU810 KBPC801-KBPC810 KBPC1501-KBPC1510 KBPC2501-KBPC2510 KBPC3501-KBPC3510 KBPC5001-KBPC5010

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品牌/商标

NEC/日本电气

型号/规格

2S*177

应用范围

放大

材料

锗(Ge)

*性

NPN型

击穿电压VCBO

-(V)

集电*允许电流ICM

-(A)

集电*耗散功率PCM

-(W)

截止频率fT

-(MHz)

结构

点接触型

封装形式

TO-92

封装材料

塑料封装