AO4441液晶高压板MOS管 全新现货热卖

General Description Product Summary

VDS

ID (at VGS=-10V) -4A

RDS(ON) (at VGS=-10V) < 100mΩ

RDS(ON) (at VGS = -4.5V) < 130mΩ

Symbol

VDS

The AO4441 uses advanced trench technology to provide

excellent RDS(ON), and ultra-low low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

BVDSS -60 V

VDS=-48V, VGS=0V -1

TJ=55°C -5

IGSS ±100 nA

VGS(th) Gate Threshold Voltage -1 -2.1 -3 V

80 100

TJ=125°C 130

102 130 mΩ

gFS 10 S

VSD -0.77 -1 V

IS -4 A

Ciss 930 1120 pF

Coss 85 pF

Crss 35 pF

Rg 7.2 9 Ω

Qg

(10V) 16 20 nC

Qg

(4.5V) 8 10 nC

Qgs 2.5 nC

Qgd 3.2 nC

tD(on) 8 ns

tr 3.8 ns

t 31.5 ns

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Drain-Source Breakdown Voltage ID=-250μA, VGS=0V

VGS=-10V, ID=-4A

RDS(ON) Static Drain-Source On-Resistance

IDSS μA

VDS=VGS, ID=-250μA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

mΩ

IS=-1A,VGS=0V

VDS=-5V, ID=-4A

VGS=-4.5V, ID=-3A

Forward Transconductance

Diode Forward Voltage

Turn-On Rise Time

Turn-Off DelayTime

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=-10V, VDS=-30V, RL=7.5Ω,

R =3Ω

Reverse Transfer Capaci