AO4406 MOS场效应管 N沟道 30V 13A

General Description

The AO4606 uses advanced trench

technology MOSFETs to provide excellent

R

DS(ON) and low gate charge. The

complementary MOSFETs may be used

to form a level shifted high side switch,

and for a host of other applications.

Features

n-channel p-channel

VDS (V) = 30V -30V

ID = 6.9A -6A

R

DS(ON) RDS(ON)

< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)

< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)