AO4813 贴片 双P沟道增强模式场效应晶体管

General Description Product Summary

VDS

ID (at VGS=-10V) -7.1A

RDS(ON) (at VGS=-10V) < 25mΩ

RDS(ON) (at VGS = -4.5V) < 40mΩ

100% UIS Tested

100% Rg

Tested

Symbol

VDS

VGS

IDM

IAS, IAR

EAS, EAR

TJ

, TSTG

Symbol

t ≤ 10s

Steady-State

Steady-State RθJL

°C

Thermal Characteristics

W

2

TA=70°C 1.3

Junction and Storage Temperature Range -55 to 150

Parameter Typ Max Units

°C/W RθJA

48

74

Maximum Junction-to-Ambient 62.5 A

Gate-Source Voltage ±20 V

mJ

Avalanche Current C

36

-27 A

A

The AO4813 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.