AO4411 液晶高压板MOS管 全新现货热

General Description Product Summary

VDS

ID (at VGS=-10V) -8A

RDS(ON) (at VGS=-10V) < 32mΩ

RDS(ON) (at VGS = -4.5V) < 55mΩ

100% UIS Tested

100% Rg

Tested

Symbol

Drain-Source Voltage VDS -30

The AO4411 uses advanced trench technology to provide

excellent RDS(ON), and ultra-low low gate charge. This

device is suitable for use as a load switch or in PWM

applications

Symbol Min Typ Max Units

BVDSS -30 V

VDS=-30V, VGS=0V -1

TJ=55°C -5

IGSS ±100 nA

VGS(th) Gate Threshold Voltage -1.3 -1.85 -2.4 V

ID(ON) -40 A

21 32

TJ=125°C 31.5 38

33 55 mΩ

gFS 19 S

VSD -0.8 -1 V

IS -3.5 A

Ciss 760 pF

Coss 140 pF

Crss 95 pF

Rg 1.5 3.2 5 Ω

Qg

(10V) 13.6 16 nC

Qg

(4.5V) 6.7 8 nC

Qgs 2.5 nC

Qgd 3.2 nC

tD(on) 8 ns

t 6 ns

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time V =-10V, V =-15V, R =1.8Ω,

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-8A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

IS=-1A,VGS=0V

VDS=-5V, ID=-8A

VGS=-4.5V, ID=-5A

Forward Transconductance

Diode Forward Voltage

Gate resistance VGS=0V, VDS=0V, f=1MHz

μA

VDS=VGS ID=-250μA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

mΩ

On state drain current

ID=-250μA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-8A

RDS(ON) Static Drain-Source On-Resistance

IDSS

Reverse Transfer Capacitance

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC