原装 AO4468 SOIC-8 N沟道 30V 10.5A 贴片 MOSFET 场效应管

General Description Product Summary

VDS

ID (at VGS=10V) 10.5A

RDS(ON) (at VGS=10V) < 17mΩ

RDS(ON) (at VGS = 4.5V) < 23mΩ

ESD Protected

100% UIS Tested

100% Rg

Tested

Symbol

VDS

The AO4468 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

* RoHS and Halogen-Free Compliant

Absolute Maximum Ratings TA=25°C unless otherwise noted

30V

Drain-Source Voltage 30

SOIC-8

Top View Bottom View

D

D

D

D

S

S

S

G

G

D

S

VDS

VGS

IDM

IAS, IAR

EAS, EAR

TJ

, TSTG

Symbol

t ≤ 10s

Steady-State

Steady-State RθJL

°C

Thermal Characteristics

W

3.1

TA=70°C 2

Junction and Storage Temperature Range -55 to 150

Power Dissipation B

PD

Parameter Typ Max Units

°C/W RθJA

31

59

Maximum Junction-to-Ambient 40 A

Gate-Source Voltage ±20 V

mJ

Avalanche Current C

18

19 A

A

10.5

V

8.5

50

Drain-Source Voltage 30

TA=25°C

TA=70°C

Avalanche energy L=0.1mH C

Pulsed Drain Current C

Continuous Drain

Symbol Min Typ Max Units

BVDSS 30 V

VDS=30V, VGS=0V 1

TJ=55°C 5

IGSS ±10 μA

VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V

ID(ON) 50 A

14 17

TJ=125°C 20 24

18 23 mΩ

gFS 36 S

VSD 0.75 1 V

IS 4 A

Ciss 740 888 pF

Coss 110 145 pF

Crss 82 115 pF

Rg 0.5 1.1 1.7 Ω

Qg

(10V) 15 nC

Qg

(4.5V) 7.5 nC

Qgs 2.5 nC

Qgd 3 nC

tD(on) 5 ns

t 3.5 ns

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time V =10V, V =15V, R =1.45Ω,

Gate Source Charge

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

mΩ

On state drain current

IS=1A,VGS=0V

VDS=5V, ID=10.5A

VGS=4.5V, ID=9A

Forward Transconductance

Maximum Body-Diode Continuous Current

RDS(ON) Static Drain-Source On-Resistance

IDSS

Drain-Source Breakdown Voltage

Diode Forward Voltage

μA

VDS=VGS ID=250μA

VDS=0V, VGS=±16V

Zero Gate Voltage Drain Current

Gate-Body leakage current

VGS=10V, VDS=15V, ID=10.5A

ID=250μA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=10.5A

Gate Drain Charge

Total Gate Charge

Input Capacitance

Output Capacitance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Cond